Abstract Detail

Abstract

Probing and controlling the fundamental properties of the CoWO4, a tungsten based ternary oxide, is always a challenging task for researchers. Before utilizing CoWO4 in novel applications, adequate control and optimization of various physical properties and parameters have always been crucial. Over the past decade, thorough research attempts have been made to provide better manipulation and insights of the physical properties of functional CoWO4 using dilute doping of metallic impurities. Subsequently, we utilize defect-induced engineering supported by Cu substitution at the Co sites in the CoWO4 lattice to modify its physical properties and parameters. At the outset, a solid-state reaction route has been employed to synthesize high-quality pure and Cu-doped CoWO4. The samples were then characterized using Powder XRD, and their pure wolframite-monoclinic polycrystalline phase, referred to as space group P2/c, was confirmed. The unit cell volume of the samples declines with the Cu content, confirming the successful doping of the Cu ions at the Co site assigned to the smaller ionic radius of Cu2+ ions (73 pm) as compared to that of the Co2+ ions (74.5 pm). X-ray photoelectron spectroscopy confirms the presence of the various ionic states of Co, Cu, W, and O. The band gap of CoWO4 was found in declining order with the increasing Cu doping content. It was also observed that the 6% Cu doping in CoWO4 material sufficiently improves its conductivity and also advances polarization, which promotes future applications for this material in various electronic devices.

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