Abstract Detail

Abstract

Hybrid organic-inorganic perovskite materials have been gradually making their way into functional material applications in recent years [1,2]. The single crystal perovskite materials exhibit higher carrier mobility, long diffusion length and longer carrier lifetime compared to nanocrystalline thin films. However, the growth of CsPbBr3 single crystal perovskites by the Bridgman technique or ligand-mediated recrystallization techniques requires high temperatures and the need for complex ligands to ensure the high quality crystals. Furthermore, from an application perspective, integrating single-crystal perovskite materials into existing CMOS technology is a lengthy process that requires various intermediate steps to achieve the final device architecture. Therefore, direct monolithic integration of the perovskite layer on any substrates or prefabricated device structure is always a welcome choice. To achieve high performance optoelectronic devices, the photoactive layer should have characteristic features such as large grains, pinhole-free, void-free, compact and smooth surface profiles, called monolithic structure. Generally, the monolithic perovskite thin films can be prepared by solution processing technique and vacuum co-evaporation method. Among the various techniques for producing monolithic/monocrystalline perovskite films, chemical vapor deposition (CVD) has emerged as the suitable technique for producing large-area, defect-free and compact films, which is urgently required for the development towards commercial throughput [3,4]. However, the monolithic compact layer of CsPbBr3 on glass substrates is rarely reported in the literature. A possible reason could be the inclusion of precise parameters required to optimize the desired structure and property. In this work, we demonstrated the fabrication of compact and monolithic CsPbBr3 films using CVD technique. The optoelectronic properties of the as-prepared layers were analyzed by fabricating a planar photodetector and a vertically stacked photodetector. The planar photodetector with Ag/CsPbBr3/Ag device configuration shows a high on/off ratio of >102 and the vertically stacked device with ITO/SnO2/CsPbBr3/CuSCN/Ag configuration shows>104 with high photoresponsivity and detectivity. A brief study of the structural and optical properties of the CsPbBr3 films grown in this way showed that they may also have applications in other optoelectronic devices such as LEDs and solar cells.

Biography

Chandrasekar.P.V received his M.Sc in Physics in 2002 from Bharathiar University, Inida, and Ph.D. in Materials Science and Engineering from Chungnam National University, South Korea in 2011 . He was a post-doctorate research fellow at Fuzhou University, China from 2013 to 2017 and Beijing Institute of Technology, P.R.China from 2017 to 2020. Subsequently, he was a Associate Professor (Research) at Minzu University of China, P.R.China from 2020 to 2023. Now he is a Associate professor in Department of Physics at Madanapalle Institute of Technology & Science and his research focuses on synthesis Nanomaterials for optoelectronic devices and bi-stable memory devices.