Abstract Detail

Abstract

The dirty graphene wave has swept across the entire scientific world. And it has once again confirmed that quasi-scientific speculations without taking into account the Fundamental Laws only lead to huge waste of effort and resources. But this wave was able to arise because it was not out of nowhere. Nobel laureates, who were in a hurry to get money, simply stated what was, in principle, expected, but from the prevailing erroneous Model of Graphite. And, thus, with their ignorant "proofs" they led the research of thin graphite layers down the wrong path. The analysis carried out in this article, using the example of the SIMPLE Graphite Material and its ultra-thin layers in a congruent matrix of boron nitride, shows how it is possible to create a whole class of fundamentally new, real materials. The ideal correct structure of thin layers of rhombohedral graphite, down to mono atomically thin, can be obtained not for a freely suspended (on sticky tape) film and not due to Van der Waals forces, as graphenologists claim, but in a congruent matrix - a crystal of rhombohedral boron nitride. And a radical improvement in the properties of materials can be obtained on the basis of truly unusual properties of such graphite layers with an undamaged surface, and in no way on the basis of a graphene model that does not correspond to the real material.
Keywords: Van der Waals forces, Chemical Bond, Translational invariance, graphene, Real Characteristics of Materials.
Conclusion: Thus, the two-sided crystalline support of thin graphite layers by rhombohedral boron nitride allows obtaining unusual, but real characteristics of ultra-thin layers of rhombohedral graphite - antigraphene. With one-sided application of graphite even on the surface perpendicular to the C axis of rhombohedral boron nitride, and one free surface of graphite is sufficient for the amorphization of the graphite film. Naturally, one can expect even greater amorphization of thin graphite films grown on other substrates that are poorly matched in crystal structure.

Biography

Stanislav Ordin graduated in 1972 from the Faculty of Radioelectronics of the Leningrad Polytechnic Institute, Russia, where he specialized in the quantum theory of solids. In 1974, he joined the Ioffe Institute of the Russian Academy of Sciences, where he is currently a senior research fellow. At the Ioffe Institute, he carried out complex experimental studies on a wide class of materials ranging from metals to dielectrics and from crystals to nanoparticles. Dr Ordin has authored more than 200 scientific papers and 15 patents, as well as 200 popular science articles on the website of the Nanotechnological Society of Russia. He was the scientific supervisor of 10 postgraduate students, all of whom successfully defended their dissertations for doctors of physics and mathematics. He is an "Honored Inventor of the USSR" and a member of the editorial board of the scientific and educational journal NBICS-Science, Technology